The nature of transport and ferromagnetic properties of the GaAs structures with the Mn {\delta}-doped layer

TL;DR

This study investigates the transport and ferromagnetic behaviors of GaAs structures with a Mn delta-doped layer, revealing dual conduction channels and electron localization as key factors, with modifications induced by helium ion irradiation.

Contribution

It provides new insights into the dual conduction mechanisms and the role of localized electrons in ferromagnetism in Mn delta-doped GaAs structures.

Findings

Transport is governed by hole and electron channels.

Ferromagnetism is linked to electrons in the Mn impurity band.

Helium irradiation modifies the structure's properties.

Abstract

We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn {\delta}-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in the valence band and the channel associated with electron transport in the Mn impurity band) and that the ferromagnetic properties are determined by the electrons localized at the allowed states within the Mn impurity band. The results also help to understand the features of structures with the Mn {\delta}-layer nearby the quantum well.