Dissociation of two-dimensional excitons in monolayer WSe2

TL;DR

This paper investigates how excitons in monolayer WSe2 dissociate under electric fields, revealing a tunneling ionization mechanism crucial for designing advanced optoelectronic devices.

Contribution

It identifies the primary exciton dissociation mechanism in monolayer WSe2 as tunnel ionization, providing insights for optoelectronic device development.

Findings

Excitons dissociate via tunnel ionization under static electric fields.

Dissociation rate matches theoretical predictions for 2D Wannier-Mott excitons.

Results inform design of efficient photodetectors and valleytronics.

Abstract

Two-dimensional (2D) semiconducting materials are promising building blocks for optoelectronic applications, many of which require efficient dissociation of excitons into free electrons and holes. However, the strongly bound excitons arising from the enhanced Coulomb interaction in these monolayers suppresses the creation of free carriers. Here, we probe and identify the main exciton dissociation mechanism through time- and spectrally-resolved photocurrent measurements in a monolayer WSe2 p-n junction. We find that under static in-plane electric field, excitons dissociate at a rate corresponding to the one predicted for the tunnel ionization of 2D Wannier-Mott excitons. This study is essential for the understanding of the optoelectronic photoresponse in of 2D semiconductors, and offers design rules for the realization of efficient photodetectors, valley-dependent optoelectronics and novel quantum coherent phases.