Cross-calibration of GaAs deformation potentials and gradient-elastic tensors using photoluminescence and nuclear magnetic resonance spectroscopy in GaAs/AlGaAs quantum dot structures
E. A. Chekhovich, I. M. Griffiths, M. S. Skolnick, H. Huang, S. F., Covre da Silva, X. Yuan, A. Rastelli

TL;DR
This study combines photoluminescence and nuclear magnetic resonance spectroscopy to accurately determine deformation potentials and gradient-elastic tensors in GaAs/AlGaAs quantum dot structures under uniaxial stress, improving understanding of strain effects.
Contribution
It provides new experimental measurements of the ratio of deformation potentials and the product of nuclear quadrupolar moments with gradient-elastic tensor components in GaAs, with signs of tensor components directly measurable.
Findings
Determined the ratio b/a=0.241±0.008 in GaAs.
Derived QS11 values for 75As and 69Ga nuclei, with signs measurable.
Found QS11 values 1.4 times smaller than previous nuclear acoustic resonance results.
Abstract
Lattice matched GaAs/AlGaAs epitaxial structures with quantum dots are studied under static uniaxial stress applied either along the or crystal directions. We conduct simultaneous measurements of the spectral shifts in the photoluminescence of the bulk GaAs substrate, which relate to strain via deformation potentials and , and the quadrupolar shifts in the optically detected nuclear magnetic resonance spectra of the quantum dots, which relate to the same strain via the gradient-elastic tensor . Measurements in two uniaxial stress configurations are used to derive the ratio in good agreement with previous studies on GaAs. Based on the previously estimated value of eV we derive the product of the nuclear quadrupolar moment and the -tensor diagonal component in GaAs to be V for…
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