Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3

TL;DR

This study characterizes the high-quality epitaxial growth and crystallization process of Cd3As2 films on SrTiO3, revealing high electron mobility and detailed structural properties relevant for quantum transport applications.

Contribution

It provides new insights into the high-temperature crystallization process of Cd3As2 films and demonstrates methods for fabricating high-mobility, epitaxial Cd3As2 films on SrTiO3 substrates.

Findings

Cd3As2 films exhibit high crystallinity with a rocking-curve width of 0.02.

Electron mobility exceeds 30,000 cm2/Vs in the films.

Crystallization occurs in two steps with increasing annealing temperature.

Abstract

Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised capping layers and substrates. The As triangular lattice is epitaxially stacked on the Ti square lattice of the (001) SrTiO3 substrate, producing (112)-oriented Cd3As2 films exhibiting high crystallinity with a rocking-curve width of 0.02 and a high electron mobility exceeding 30,000 cm2/Vs. The systematic characterisation of films annealed at various temperatures allowed us to identify two-step crystallisation processes in which out-of-plane and subsequently in-plane directions occur with increasing annealing temperature. Our findings on the high-temperature crystallisation process of Cd3As2 enable a unique approach for fabricating high-quality Cd3As2 films and elucidating quantum transport by back gating through the SrTiO3 substrate.