Symmetry and topology in antiferromagnetic spintronics

TL;DR

This paper reviews recent advances in antiferromagnetic spintronics, highlighting the integration of symmetry and topology, and discusses how these concepts enable novel electronic and magnetic phenomena in antiferromagnetic materials.

Contribution

It introduces the intersection of symmetry, topology, and antiferromagnetic spintronics, emphasizing recent discoveries and potential for new device functionalities.

Findings

Efficient electrical switching of antiferromagnetic moments via Néel spin-orbit torque

Observation of anomalous Hall effect in antiferromagnets

Emergence of topological effects in antiferromagnetic materials

Abstract

Antiferromagnetic spintronics focuses on investigating and using antiferromagnets as active elements in spintronics structures. Last decade advances in relativistic spintronics led to the discovery of the staggered, current-induced field in antiferromagnets. The corresponding N\'{e}el spin-orbit torque allowed for efficient electrical switching of antiferromagnetic moments and, in combination with electrical readout, for the demonstration of experimental antiferromagnetic memory devices. In parallel, the anomalous Hall effect was predicted and subsequently observed in antiferromagnets. A new field of spintronics based on antiferromagnets has emerged. We will focus here on the introduction into the most significant discoveries which shaped the field together with a more recent spin-off focusing on combining antiferromagnetic spintronics with topological effects, such as antiferromagnetic topological semimetals and insulators, and the interplay of antiferromagnetism, topology, and superconductivity in heterostructures.