Diamond nano-pyramids with narrow linewidth SiV centers for quantum technologies

TL;DR

This study demonstrates the creation of diamond nano-pyramids with SiV centers exhibiting narrow linewidths, suitable for quantum technologies, highlighting low strain and high-quality photoluminescence at cryogenic temperatures.

Contribution

The paper reports on the synthesis and optical characterization of CVD-grown diamond nano-pyramids with SiV centers showing narrow linewidths and low strain, advancing quantum device development.

Findings

SiV centers in nano-pyramids have linewidths below 10 GHz

Nano-pyramids exhibit low crystal strain

Photoluminescence spectra show bulk-like zero-phonon lines

Abstract

Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) can exhibit a narrow photoluminescence (PL) line and lifetime-limited linewidth in bulk diamonds at cryogenic temperature. We present a low-temperature study of chemical vapour deposition (CVD)-grown diamond nano-pyramids containing SiV centers. The PL spectra feature a bulk-like zero-phonon line with ensembles of SiV centers, with a linewidth below 10 GHz which demonstrates very low crystal strain for such a nano-object.