Analysis of Current Hysteresis in Graphene Field Effect Transistor

TL;DR

This paper investigates the hysteresis effects in graphene FETs with electrolyte and back gates, analyzing how sweep rate and range influence behavior, and proposes mechanisms like charge trapping and capacitive effects to explain observations.

Contribution

It provides a comparative analysis of hysteresis mechanisms in electrolyte and back-gated graphene FETs, with experimental insights into charge trapping and capacitive effects.

Findings

Hysteresis depends on sweep rate and range.

Charge trapping and capacitive effects are key mechanisms.

Experimental results partially confirm proposed explanations.

Abstract

In this report, the hysteresis behaviors of PEI:LiClO4 and PEG:LiClO4 electrolyte gate and back gate Graphene-on-SiO2 FET were analyzed by gate-voltage source-drain current modulation. It is shown that both the sweeping rate and the sweep range will cause hysteresis behaviors in the form of Dirac Point shifting or changes in the current. Different mechanisms including charge trapping and electrical double layer capacitive effect are proposed to explain the behavior qualitatively on both back gated and electrolyte gated FET and partially confirmed with the present experimental results.