Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study
Michele Pizzochero, Oleg V. Yazyev

TL;DR
This study uses first-principles calculations to compare point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$, revealing differences in defect stability, magnetic properties, and reactivity relevant for material applications.
Contribution
It provides a comprehensive theoretical comparison of intrinsic point defects in 1$T'$-MoS$_2$ and 2$H$-MoS$_2$, highlighting defect formation energies and magnetic effects.
Findings
1$T'$-MoS$_2$ is more prone to hosting lattice imperfections than 2$H$-MoS$_2$.
S vacancies and adatoms are likely in both phases, while Mo vacancies are more abundant in 1$T'$-MoS$_2$.
Defects can be exploited to tailor the material's physical and chemical properties.
Abstract
The metastable 1 phase of layered transition metal dichalcogenides has recently attracted considerable interest due to electronic properties, possible topological electronic phases and catalytic activity. We report a comprehensive theoretical investigation of intrinsic point defects in the 1 crystalline phase of single-layer molybdenum disulfide (1-MoS), and provide comparison to the well-studied semiconducting 2 phase. Based on density functional theory calculations, we explore a large number of configurations of vacancy, adatom and antisite defects and analyse their atomic structure, thermodynamic stability, electronic and magnetic properties. The emerging picture suggests that, under thermodynamic equilibrium, 1-MoS is more prone to hosting lattice imperfections than the 2 phase. More specifically, our findings reveal that the S atoms that are closer to…
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