Bulk and surface characterization of In$_2$O$_3$(001) single crystals
Daniel R. Hagleitner, Peter Jacobson, Sara Blomberg, Karina Schulte,, Edvin Lundgren, Markus Kubicek, J\"urgen Fleig, Frank Kubel, Christoph Puls,, Andreas Limbeck, Herbert Hutter, Lynn A. Boatner, Michael Schmid, Ulrike, Diebold

TL;DR
This study provides a detailed analysis of the bulk and surface properties of high-quality In$_2$O$_3$(001) single crystals, revealing their structural, electronic, and surface chemistry characteristics through various advanced techniques.
Contribution
It offers new insights into the surface termination, electronic states, and band bending of In$_2$O$_3$(001) crystals, with comprehensive characterization data and revised lattice parameters.
Findings
Surface is indium-terminated with small islands under reducing conditions
Surface states at the Fermi level are observed via STS
Oxidation removes deep-lying band gap states and alters surface chemistry
Abstract
A comprehensive bulk and surface investigation of high-quality InO(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry (ICP-MS) reveals small residues of Pb, Mg, and Pt in the crystals. Four-point-probe measurements show a resistivity of 2.0 0.5 10 {\Omega} cm, which translates into a carrier concentration of 10 cm. The results from x-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5) {\AA} from the previously accepted value of 10.117 {\AA}. Scanning tunneling microscopy (STM) images of a reduced (sputtered/annealed) and oxidized (exposure to atomic oxygen at 300 {\deg}C) surface show a step height of 5 {\AA}, which indicates a preference for one type of surface termination. The surfaces stay flat…
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