Pt$_3$Zr(0001): A substrate for growing well-ordered ultrathin zirconia films by oxidation
Moritz Antlanger, Wernfried Mayr-Schm\"olzer, Ji\v{r}\'i Pavelec,, Florian Mittendorfer, Josef Redinger, Peter Varga, Ulrike Diebold, Michael, Schmid

TL;DR
This study investigates the surface structure and oxidation behavior of Pt$_3$Zr(0001), demonstrating its suitability as a substrate for growing well-ordered ultrathin zirconia films with specific structural and electronic properties.
Contribution
The paper provides detailed atomic-scale insights into the surface structure, oxidation process, and bonding characteristics of Pt$_3$Zr(0001), introducing it as a promising substrate for ultrathin zirconia film growth.
Findings
Successful formation of a ZrO$_2$ trilayer with a specific superstructure
Weak binding of oxide trilayer to substrate with Zr atoms bonding mainly to Pt
Oxide exhibits a bandgap with conduction band minimum about 2.3 eV above Fermi level
Abstract
We have studied the surface of pure and oxidized PtZr(0001) by scanning tunneling microscopy (STM), Auger electron microscopy, and density functional theory (DFT). The well-annealed alloy surface shows perfect long-range chemical order. Occasional domain boundaries are probably caused by nonstoichiometry. PtZr exhibits ABAC stacking along [0001]; only the A-terminated surfaces are seen by STM, in agreement with DFT results showing a lower surface energy for the A termination. DFT further predicts a stronger inward relaxation of the surface Zr than for Pt, in spite of the larger atomic size of Zr. A closed ZrO film is obtained by oxidation in mbar O at 400 C and post-annealing at C. The oxide consists of an O-Zr-O trilayer, equivalent to a (111) trilayer of the fluorite structure of cubic ZrO, but contracted laterally. The oxide…
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