First principle investigation of Tunnel FET based on nanoribbons from topological two-dimensional material

TL;DR

This paper investigates tunnel FETs using nanoribbons from topological 2D materials, demonstrating their robustness and potential for ultra-scaled digital applications through first-principle and multi-scale simulations.

Contribution

It introduces a novel approach of using topological nanoribbons as 1D channels in TFETs, showing their robustness and potential for future device scaling.

Findings

Edges states are robust against non-idealities

1D-channel TFETs show promising performance for digital applications

Potential for optimizing Ion/Ioff ratios at industry standards

Abstract

We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one-dimensional (1D) channel devices (comprised of a 1D chain of atoms) due to localized states in correspondence of the nanoribbon edges. The investigation is based on first-principle calculations and multi-scale transport simulations to assess devices performance against industry requirements and their robustness with respect to technological issues like line edge roughness, detrimental for nanoribbons. We will show that edges states are robust with respect to the presence of non-idealities (e.g., atoms vacancies at the edges), and that 1D-channel TFETs exhibit interesting potential for digital applications and room for optimization in order to improve the Ion/Ioff at the levels required by the ITRS, while opening a path for the exploration of new device concepts at the ultimate scaling limits.