In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing

TL;DR

This paper presents an in-situ laser-induced intermixing technique for precisely tuning the emission energies of individual nanowire quantum dots, enabling their use in quantum networks.

Contribution

The study introduces a deterministic, in-situ laser tuning method for individual nanowire quantum dots with a significant energy shift range and high precision.

Findings

Achieved up to 15 meV tuning range.

Observed saturation behavior indicating defect-mediated intermixing.

Demonstrated potential for quantum network applications.

Abstract

We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for the deterministic tuning of individual emitters. A tuning range of up to 15 meV is obtained with a precision limited by the laser exposure time. A distinct saturation of the energy shift is observed, which suggests an intermixing mechanism relying on grown-in defects that are subsequently removed from the semiconductor material during annealing. The ability to tune different emitters into resonance with each other will be required for fabricating remote quantum dot-based sources of indistinguishable photons for secure quantum networks.