Crystal Growth and Characterization of Bulk Sb2Te3Topological Insulator
Rabia Sultana (CSIR-NPL, India), Ganesh Gurjar, and S. Patnaik, (JNU-India), V.P.S. Awana (CSIR-NPL, India)
TL;DR
This paper presents a simple method for growing bulk Sb2Te3 topological insulator crystals and analyzes their low-temperature magneto-conductance properties using the HLN model.
Contribution
It introduces an easy, versatile crystal growth technique for Sb2Te3 TIs and provides initial physical property characterization.
Findings
Successful growth of high-quality Sb2Te3 crystals
Observation of weak anti-localization effects at low temperatures
Analysis of magneto-conductance using HLN model
Abstract
The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 C), followed by slow cooling (2 C per hour).The weak anti localization (WAL) related low field (2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami- Larkin - Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.
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Taxonomy
TopicsTopological Materials and Phenomena · Neural Networks and Applications