Observation of transition from semiconducting to metallic ground state in high-quality single crystalline FeSi
Y. Fang, S. Ran, W. Xie, M. B. Maple

TL;DR
This study reveals a transition from semiconducting to metallic behavior in high-quality FeSi crystals at low temperatures, with evidence suggesting the emergence of a surface conducting state without bulk magnetic order.
Contribution
It provides detailed experimental evidence of a temperature-induced electronic transition in FeSi, highlighting surface conduction phenomena in a correlated electron system.
Findings
Transition from semiconducting to metallic-like behavior at ~19 K
Sign change in Hall coefficient and magneto-resistivity below 67 K
No bulk magnetic order detected near transition temperatures
Abstract
We report anomalous physical properties of single-crystalline FeSi over a wide temperature range 1.8-400 K. X-ray diffraction, specific heat, and magnetization measurements indicate that the FeSi crystals synthesized in this study are of high quality with a very low concentration of magnetic impurities (0.01). The electrical resistivity () can be described by activated behavior with an energy gap = 57 meV between 67 K and 150 K. At temperatures below 67 K, () is significantly lower than an extrapolation of the activated behavior, and the Hall coefficient and magneto-resistivity undergo a sign change in this region. At 19 K, a transition from semiconducting to metallic-like behavior is observed with deceasing temperature. Whereas the transition temperature is very robust in a magnetic field, the magnitude of the resistivity below 30 K is…
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Taxonomy
TopicsSemiconductor materials and interfaces · Chemical and Physical Properties of Materials · Magnetic properties of thin films
