Ultra-high Vacuum Deposition of Higher Manganese Silicide Mn4Si7 Thin Films

TL;DR

This paper reports the successful growth of Mn4Si7 thin films on silicon substrates using ultra-high vacuum deposition, revealing their crystal structure, magnetic, and electrical properties, which are relevant for electronic applications.

Contribution

First demonstration of Mn4Si7 thin films grown via ultra-high vacuum deposition with detailed structural and electrical characterization.

Findings

Films exhibit tetragonal crystal structure

Display paramagnetic behavior

Resistivity of 3.321 x 10^-5 ohm-m at room temperature

Abstract

We have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultra-high vacuum deposition with a base pressure of 1x10-9 torr. The thickness of the film was varied from 65-100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity of 3.321 x 10-5 ohm-m at room temperature and show a semi-metallic nature.