Stress modulated optical spin-injection in bulk semiconductors

TL;DR

This paper presents ab initio calculations of how stress influences spin polarization in bulk silicon and GaAs, revealing stress-dependent shifts and magnitude changes in the spin polarization signal.

Contribution

It provides the first detailed ab initio analysis of stress effects on optical spin-injection in bulk semiconductors, highlighting material-specific responses.

Findings

Compressive stress slightly reduces DSP peak in Si.

Stress shifts DSP peak to higher energies in Si.

The study offers insights into stress-controlled spin injection mechanisms.

Abstract

A full band-structure ab initio calculation of the degree of spin polarization (DSP) in stressed bulk Si and bulk GaAs is reported. For Si, we found that compressive stress causes the DSP signal peak to decrease slightly in magnitude and to shift to higher energies.