Transistor concepts based on lateral heterostructures of metallic and semiconducting phases of MoS$_2$

TL;DR

This paper introduces two novel transistor concepts based on lateral heterostructures of monolayer MoS$_2$, demonstrating potential for improved performance over traditional CMOS technology through detailed simulations.

Contribution

It proposes two new transistor designs utilizing lateral heterostructures of MoS$_2$, showing their potential advantages over existing technologies through comprehensive modeling.

Findings

Lateral heterostructure FET shows potential for high performance and low power applications.

Planar barristor exhibits orders of magnitude improvement over vertical barristor.

Simulations indicate competitive performance with CMOS technology.

Abstract

In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS$_2$, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron beam irradiation. The first concept, the lateral heterostructure field-effect transistor, exhibits potential of better performance with respect to the foreseen evolution of CMOS technology, both for high performance and low power applications. Performance potential has been evaluated by means of detailed multi-scale materials and device simulations. The second concept, the planar barristor, also exhibits potential competitive performance with CMOS, and an improvement of orders of magnitude in terms of the main figures of merit with respect to the recently proposed vertical barristor.