Memory effects in the ion conductor Rb$_{2}$Ti$_{2}$O$_{5}$
R\'emi Federicci, St\'ephane Hol\'e, Vincent D\'emery, Brigitte, Leridon
TL;DR
This paper investigates the memory effects in Rb2Ti2O5 crystals, highlighting their memristive behavior due to charge accumulation, supported by an analytical model considering ionic diffusion and migration.
Contribution
It introduces the observation of memristive properties in Rb2Ti2O5 and proposes an analytical model explaining these effects through ionic processes.
Findings
Rb2Ti2O5 exhibits volatile memristive behavior.
The analytical model aligns well with experimental observations.
Memory effects are linked to charge accumulation and ionic migration.
Abstract
Recent studies on Rb2Ti2O5 crystals have demonstrated remarkable electrical properties. This material exhibits colossal electrical polarization between 200 K and 330 K. In the present work, we report on the observation of memory effects in Rb2Ti2O5 due to charge accumulation and we discuss the genuine memristive character of this material. An analytical model is proposed for the system, which takes into account the ionic diffusion and ionic migration and is in good agreement with the observed volatile memristive properties of the material.
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