Explicit screening full band quantum transport model for semiconductor nanodevices

TL;DR

This paper introduces an explicit screening full band quantum transport model for semiconductor nanodevices, improving accuracy and consistency in charge attribution and device performance predictions across different structures.

Contribution

It extends an electron-only band structure model to atomistic quantum transport, eliminating reliance on device-specific dielectric constants and reducing variability in charge interpretation.

Findings

Model provides consistent charge attribution across device types

Performance predictions align well with experimental data

Reduces dependence on dielectric constant assumptions

Abstract

State of the art quantum transport models for semiconductor nanodevices attribute negative (positive) unit charges to states of the conduction (valence) band. Hybrid states that enable band-to-band tunneling are subject to interpolation that yield model dependent charge contributions. In any nanodevice structure, these models rely on device and physics specific input for the dielectric constants. This paper exemplifies the large variability of different charge interpretation models when applied to ultrathin body transistor performance predictions. To solve this modeling challenge, an electron-only band structure model is extended to atomistic quantum transport. Performance predictions of MOSFETs and tunneling FETs confirm the generality of the new model and its independence of additional screening models.