Tunable spin dependent transport in the dor-ring nanostructure

TL;DR

This paper investigates how electrical gating can control spin-dependent electron transport in a quantum dot surrounded by a nanoring, revealing tunable positive and negative differential conductance.

Contribution

It introduces a model of a quantum dot with a nanoring that demonstrates controllable spin-dependent transport properties via gate voltage tuning.

Findings

System exhibits positive and negative differential conductance.

Transport properties are controllable by electrical gating.

Potential for tunable spintronic device applications.

Abstract

We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential that forms the nanostructure can be controlled by electrical gating. We demonstrate that depending on the model parameters the system can exhibit positive as well as negative differential conductance (NDC). What is more interesting, these properties can be easily controlled by tuning the applied gate voltage.