Electronic structure of the Co(0001)/MoS2 interface, and its possible use for electrical spin injection in a single MoS2 layer
Thomas Garandel (CEMES-MEM, INSA Toulouse), R\'emi Arras (CEMES-MEM),, Xavier Marie (INSA Toulouse), Pierre Renucci (LPCNO), Lionel Calmels, (CEMES-MEM)

TL;DR
This study uses first-principles calculations to analyze the Co(0001)/MoS2 interface, revealing its potential for efficient electrical spin injection into monolayer MoS2 for spintronic applications.
Contribution
It provides detailed electronic structure insights of the Co/MoS2 interface, highlighting its metallic phase and spin polarization properties relevant for spin injection.
Findings
MoS2 becomes metallic when bound to Co due to orbital hybridization.
A spin polarization of 16% at the Fermi level suggests potential for spin injection.
Interface covalent bonding affects magnetic moments and charge transfer.
Abstract
The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices using these materials. Here, the hcp Co(0001)/MoS2 interface electronic structure is investigated by first-principles calculations based on the density functional theory. In the lowest energy configuration of the hybrid system after optimization of the atomic coordinates, we show that interface sulfur atoms are covalently bound to one, two or three cobalt atoms. A decrease of the Co atom spin magnetic moment is observed at the interface, together with a small magnetization of S atoms. Mo atoms also hold small magnetic moments which can take positive as well as negative values. The charge transfers due to covalent bonding between S and Co atoms at the…
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Taxonomy
Topics2D Materials and Applications · ZnO doping and properties · Magnetic properties of thin films
