Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths

TL;DR

This paper demonstrates a CMOS-compatible silicon nitride photonic device that generates correlated photon pairs at near-visible wavelengths, enabling scalable integrated quantum photonics at room temperature.

Contribution

It introduces a high-Q ring resonator in silicon nitride for efficient photon pair generation compatible with standard CMOS fabrication.

Findings

Generation rate of 950,000 pairs/mW

High Q-factor of 320,000

Potential for integrated quantum photonic chips

Abstract

We demonstrate on chip generation of correlated pairs of photons in the near-visible spectrum using a CMOS compatible PECVD Silicon Nitride photonic device. Photons are generated via spontaneous four wave mixing enhanced by a ring resonator with high quality Q-factor of 320,000 resulting in a generation rate of 950,000 $\frac{pairs}{mW}$. The high brightness of this source offers the opportunity to expand photonic quantum technologies over a broad wavelength range and provides a path to develop fully integrated quantum chips working at room temperature.