Large-Scale Fabrication of RF MOSFETs on Liquid-Exfoliated MoS2

TL;DR

This paper reports the first large-scale, high-yield fabrication of RF MOSFETs on liquid-exfoliated MoS2 at low temperatures, demonstrating promising RF performance and innovative fabrication techniques for microwave applications.

Contribution

It introduces a scalable, high-yield process for fabricating RF MOSFETs on liquid-exfoliated MoS2 with novel gate recess techniques to enhance performance.

Findings

Achieved nearly 100% yield in large-scale fabrication.

First RF performance report for liquid-exfoliated MoS2 devices.

Demonstrated potential for microwave-range thin-film transistors.

Abstract

For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 {\deg}C with nearly 100% yield. The large-scale fabrication with high yield allowed the average performance instead of the best performance to be reported. The DC performance of these devices were typical, but the RF performance, enabled by buried gates and on the order of 100 MHz, was reported for the first time for liquid-exfoliated MoS2. To resolve the dilemma of thin vs. thick films, gate recess was used on 20-nm thick films to improve the gate control while keeping the contact resistance lower than that on 10-nm films. These innovations may enable thin-film transistors to operate in the microwave range.