Origin of Mott insulating behavior and superconductivity in twisted bilayer graphene
Hoi Chun Po, Liujun Zou, Ashvin Vishwanath, T. Senthil

TL;DR
This paper investigates the origin of Mott insulating behavior and superconductivity in twisted bilayer graphene, proposing a valley-ordered Mott insulator model and analyzing the symmetry constraints and tight-binding descriptions relevant to the observed phenomena.
Contribution
It introduces a valley-ordered Mott insulator model with symmetry considerations and derives tight-binding models emphasizing the importance of further neighbor hopping and interactions.
Findings
Proposes a valley-ordered Mott insulator state in twisted bilayer graphene.
Identifies symmetry constraints and the importance of further neighbor hopping.
Suggests mechanisms for superconductivity upon doping the Mott insulator.
Abstract
A remarkable recent experiment has observed Mott insulator and proximate superconductor phases in twisted bilayer graphene when electrons partly fill a nearly flat mini-band that arises a `magic' twist angle. However, the nature of the Mott insulator, origin of superconductivity and an effective low energy model remain to be determined. We propose a Mott insulator with intervalley coherence that spontaneously breaks U(1) valley symmetry, and describe a mechanism that selects this order over the competing magnetically ordered states favored by the Hunds coupling. We also identify symmetry related features of the nearly flat band that are key to understanding the strong correlation physics and constrain any tight binding description. First, although the charge density is concentrated on the triangular lattice sites of the moir pattern, the Wannier states of the tight-binding…
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