Spin polarisation of ultrashort spin current pulses injected in semiconductors
Marco Battiato

TL;DR
This paper investigates how different metallic and semiconductor interfaces affect the amplitude, spin polarization, and duration of ultrashort spin current pulses, aiming to improve their propagation in spintronic devices.
Contribution
It expands the study of spin pulse injection to various interfaces, providing guidelines for selecting efficient combinations to enhance ultrashort spin current propagation.
Findings
Different interfaces significantly influence pulse amplitude and polarization.
Certain metallic and semiconductor combinations optimize pulse duration.
Guidelines for experimental interface design are proposed.
Abstract
Ultrashort spin current pulses have a great potential of becoming the carriers of information in future ultrafast spintronics. They present the outstanding property of an extremely compressed time profile, which can allow for the building up of spintronics operating at the unprecedented THz frequencies. The ultrashort spin pulses, however still lack other desirable features. For instance the spatial profile resembles more that of a spill rather than that of a spatially compressed pulse. Moreover the ultrashort spin current pulses can travel only across small distances in metals. The injection of the ultrashort spin pulses from the metallic ferromagnet, where they have to be generated, into a semiconductor is proposed as the first step to overcome both issues by allowing the exited electrons to propagate in a medium with few scatterings. However designing efficient interfaces for the…
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