Connecting Complex Electronic Pattern Formation to Critical Exponents
Shuo Liu, E. W. Carlson, K. A. Dahmen

TL;DR
This paper develops a theory linking geometric cluster critical exponents in Ising models to experimental surface patterns, enabling better interpretation of scanning probe data and distinguishing surface from bulk phenomena.
Contribution
It introduces a novel framework for analyzing geometric critical exponents in Ising models and demonstrates their distinct scaling behavior and robustness in 2D slices of 3D systems.
Findings
Geometric critical exponents differ from thermodynamic exponents.
2D cross-sections of 3D clusters show critical scaling at bulk transition.
Pair connectivity function exhibits more robust critical behavior than spin-spin correlations.
Abstract
Scanning probes reveal complex, inhomogeneous patterns on the surface of many condensed matter systems. In some cases, the patterns form self-similar, fractal geometric clusters. In this paper, we advance the theory of criticality as it pertains to those geometric clusters (defined as connected sets of nearest-neighbor aligned spins) in the context of Ising models. We show how data from surface probes can be used to distinguish whether electronic patterns observed at the surface of a material are confined to the surface, or whether the patterns originate in the bulk. Whereas thermodynamic critical exponents are derived from the behavior of Fortuin-Kasteleyn (FK) clusters, critical exponents can be similarly defined for geometric clusters. We find that these geometric critical exponents are not only distinct numerically from the thermodynamic and uncorrelated percolation exponents, but…
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