Origin of the monolayer Raman signature in hexagonal boron nitride: a first-principles analysis
Jorge Ontaneda, Anjali Singh, Umesh V. Waghmare, Ricardo Grau-Crespo

TL;DR
This study uses first-principles calculations to determine that the Raman shift in monolayer hexagonal boron nitride is primarily due to in-plane contraction and thermal expansion effects, clarifying its origin.
Contribution
It demonstrates that the intrinsic Raman shift is caused by in-plane contraction, and thermal effects diminish this signature, resolving debates on the shift's origin.
Findings
In-plane contraction explains the Raman shift from bulk to monolayer.
Thermal expansion reduces the in-plane difference between bulk and monolayer.
Non-local correlation effects are essential for accurate predictions.
Abstract
Monolayers of hexagonal boron nitride (h-BN) can in principle be identified by a Raman signature, consisting of an upshift in the frequency of the E2g vibrational mode with respect to the bulk value, but the origin of this shift (intrinsic or support-induced) is still debated. Herein we use density functional theory calculations to investigate whether there is an intrinsic Raman shift in the h-BN monolayer in comparison with the bulk. There is universal agreement among all tested functionals in predicting the magnitude of the frequency shift upon a variation in the in-plane cell parameter. It is clear that a small in-plane contraction can explain the Raman peak upshift from bulk to monolayer. However, we show that the larger in-plane parameter in the bulk (compared to the monolayer) results from non-local correlation effects, which cannot be accounted for by local functionals or those…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
