Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

TL;DR

This paper introduces a simple two-parameter extension to ballistic models that accurately predicts nanoscale MOSFET behavior, validated through experimental fabrication and analysis of device length dependence.

Contribution

It presents a novel two-parameter quasi-ballistic model that improves current-voltage predictions for nanoscale transistors over previous models.

Findings

Model accurately fits experimental data

Transmission probability and coupling capacitor are key parameters

Length dependence supports quasi-ballistic behavior

Abstract

We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl. Phys. 76, 4879 (1994)) and includes transmission probability and the drain-channel coupling capacitor. The latter parameter gives rise to a theoretical RON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.