Field Effect Transistors based on Networks of Highly Aligned, Chemically Synthesized N=7 Armchair Graphene Nanoribbons

TL;DR

This paper demonstrates the fabrication and electrical testing of field effect transistors made from highly aligned, atomically precise N=7 armchair graphene nanoribbons, showing promising scalability and high current ratios.

Contribution

It introduces a scalable method for fabricating FETs from aligned, atomically precise GNRs with long channels, advancing nanoelectronic device development.

Findings

Maximum I_ON/I_OFF ratio of 87.5 achieved.

Transistors fabricated from highly aligned GNRs with long channels.

Scalable transfer process demonstrated for device fabrication.

Abstract

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I$_{ON}$/I$_{OFF}$ current ratio of 87.5.