High Speed and Low Power Sensing Schemes for STT-MRAM with IPMTJs

TL;DR

This paper investigates the reading operation of STT-MRAM with IPMTJs, achieving significant improvements in speed and power efficiency over previous designs.

Contribution

It is the first study to analyze the reading operation of IPMTJ-based STT-MRAM, demonstrating enhanced performance metrics.

Findings

2.5X reduction in average low power

13X increase in average high speed

Successful implementation of read operations with NVSenseAmp

Abstract

STT-MRAM with interfacial-anisotropy-type perpendicular MTJ (IPMTJ) is a powerful candidate for the low switching energy design of STT-MRAM. In the literature, the reading operation of STT-MRAM structured with IPMTJs have been not studied until this time, in our knowledge. We investigated the reading operation of STT-MRAM structured with IPMTJs. To enumerate the read operations of the NVSenseAmp have successfully been performed a 2.5X reduction in average low power and a 13X increase in average high speed compared with the previous works.