Optical Property Study of Charge Compensated (Si, Na) Co-doped ZnO
Tulika Srivastava, Gaurav Bajpai, Gyanendra Rathore, Prashant Mishra,, Shun Wei Liu, Sajal Biring, Somaditya Sen

TL;DR
This study investigates how co-doping ZnO with Na+ and Si4+ affects its structural and optical properties, revealing charge compensation effects and defect-related luminescence changes.
Contribution
It introduces a specific Na+ and Si4+ co-doping ratio that maintains charge neutrality, analyzing its impact on ZnO's optical and structural characteristics.
Findings
Lower doping Na+ enhances defects and reduces bandgap.
Higher doping Na+ reduces strain and increases bandgap.
Oxygen vacancies increase with Si4+ doping.
Abstract
ZnO is co-doped with Na+ and Si4+ in the ratio 2:1. The ratio was intentionally chosen so that net valence state of dopant theoretically matches that of host. This is to avoid dependence in the amount of oxygen vacancies/interstitials arising out of cationic valence state of the dopant. With such a combination, modifications in structural and optical properties do not depend on excess or deficit of the dopant charge state. For lower doping, Na+ ions behave as interstitial sites which enhance strain, lattice disorder and thereby creating defects. Formation of interstitial defects leads to reduction in bandgap energy and produce orange-red luminescence. For higher doping, Na+ starts substituting at Zn2+ site which helps in reducing strain and lattice disorder and thereby increases bandgap. Inspite of presence of Si4+ with higher charge, there is a gradual increase in oxygen vacancies due…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsZnO doping and properties · Chalcogenide Semiconductor Thin Films
