On-Demand Generation of Neutral and Negatively-Charged Silicon-Vacancy Centers in Diamond

TL;DR

This study investigates the charge dynamics of silicon-vacancy and nitrogen-vacancy centers in diamond using two-color confocal microscopy, revealing mechanisms of charge state transformation and enabling on-demand charge initialization for quantum applications.

Contribution

It provides new insights into the photo-ionization processes of SiV and NV centers and demonstrates a method for large-area, on-demand charge state control.

Findings

SiV centers ionize via a single photon process at 532 nm.

Charge states can be selectively transformed using laser illumination.

On-demand charge initialization is achievable over large areas.

Abstract

Point defects in wide-bandgap semiconductors are emerging as versatile resources for nanoscale sensing and quantum information science but our understanding of the photo-ionization dynamics is presently incomplete. Here we use two-color confocal microscopy to investigate the dynamics of charge in Type 1b diamond hosting nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers. By examining the non-local fluorescence patterns emerging from local laser excitation, we show that in the simultaneous presence of photo-generated electrons and holes, SiV (NV) centers selectively transform into the negative (neutral) charge state. Unlike NVs, 532 nm illumination ionizes SiV- via a single photon process thus hinting at a comparatively shallower ground state. In particular, slower ionization rates at longer wavelengths suggest the latter lies approximately ~1.9 eV below the conduction band minimum. Building on the above observations we demonstrate on-demand SiV and NV charge initialization over large areas via green laser illumination of variable intensity.