Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion Shift Device

TL;DR

This paper introduces a voltage-driven method for high-speed skyrmion motion in nanowire devices, achieving speeds up to 259 m/s with significantly lower energy dissipation compared to current-driven models, promising energy-efficient spintronic applications.

Contribution

The paper presents a novel voltage-driven skyrmion shift device that enables high-speed motion with ultra-low power consumption, differing from traditional current-driven approaches.

Findings

Skyrmion velocity reaches 259 m/s under 0.45 V.

Energy dissipation is three orders of magnitude lower than current-driven models.

Potential for ultra-low power, high-speed spintronic devices.

Abstract

Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion motion, the required driving current density is usually very large, which could be energy inefficient and even destroy the device due to Joule heating. Here, we propose a voltage-driven skyrmion motion approach in a skyrmion shift device made of magnetic nanowires. The high-speed skyrmion motion is realized by utilizing the voltage shift, and the average skyrmion velocity reaches up to 259 m/s under 0.45 V applied voltage. In comparison with the widely studied vertical current-driven model, the energy dissipation is three orders of magnitude lower in our voltage-driven model, for the same speed motion of skyrmions. Our approach uncovers valuable opportunities for building skyrmion racetrack memories and logic devices with both ultra-low power consumption and ultra-high processing speed, which are appealing features for future spintronic applications.