A case for multiple and parallel RRAMs as synaptic model for training SNNs
Aditya Shukla, Sidharth Prasad, Sandip Lashkare, Udayan Ganguly

TL;DR
This paper proposes using multiple parallel PCMO-RRAM devices as synapses in spiking neural networks to meet specific scalability and plasticity requirements, validated through experiments and circuit analysis.
Contribution
It introduces new specifications for synaptic devices in SNNs, proposes a parallel RRAM solution to meet these specs, and validates the approach experimentally and circuit-wise.
Findings
Parallel RRAMs improve synaptic modeling in SNNs.
Single RRAMs with high learning-rate fail to model synapses effectively.
Experimental demonstration of STDP in PCMO-RRAMs.
Abstract
To enable a dense integration of model synapses in a spiking neural networks hardware, various nano-scale devices are being considered. Such a device, besides exhibiting spike-time dependent plasticity (STDP), needs to be highly scalable, have a large endurance and require low energy for transitioning between states. In this work, we first introduce and empirically determine two new specifications for an synapse in SNNs: number of conductance levels per synapse and maximum learning-rate. To the best of our knowledge, there are no RRAMs that meet the latter specification. As a solution, we propose the use of multiple PCMO-RRAMs in parallel within a synapse. While synaptic reading, all PCMO-RRAMs are simultaneously read and for each synaptic conductance-change event, the mechanism for conductance STDP is initiated for only one RRAM, randomly picked from the set. Second, to validate our…
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