Atomic-scale structure and chemistry of YIG/GGG Interface

TL;DR

This study uses advanced microscopy and spectroscopy to analyze the atomic structure and chemistry of the YIG/GGG interface, revealing a sharp interface with specific bonding characteristics crucial for spin wave device performance.

Contribution

It provides detailed atomic and electronic structure characterization of the YIG/GGG interface, aiding understanding for device optimization and atomistic modeling.

Findings

Interface is FeO-GdGaO bonding

Interface remains sharp at atomic and electronic levels

Provides data for atomistic calculations

Abstract

Y3Fe5O12 (YIG) is a promising candidate for spin wave devices. In the thin film devices, the interface between YIG and substrate may play important roles in determining the device properties. Here, we use spherical aberration-corrected scanning electron microscopy and spectroscopy to study the atomic arrangement, chemistry and electronic structure of the YIG/Gd3Ga5O12 (GGG) interface. We find that the chemical bonding of the interface is FeO-GdGaO and the interface remains sharp in both atomic and electronic structures. These results provide necessary information for understanding the properties of interface and also for atomistic calculation.