Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N
Katarzyna Gas, Jaroslaw Z. Domagala, Rafal Jakiela, Gerd Kunert, Piotr, Dluzewski, Edyta Piskorska-Hommel, Wojciech Paszkowicz, Dariusz Sztenkiel,, Maciej J. Winiarski, Dorota Kowalska, Rafal Szukiewicz, Tomasz Baraniecki,, Andrzej Miszczuk, Detlef Hommel, and Maciej Sawicki

TL;DR
This study investigates how substrate temperature during plasma-assisted molecular beam epitaxy affects the structural, microstructural, and magnetic properties of (Ga,Mn)N layers, revealing a strong correlation between growth temperature and magnetic behavior.
Contribution
It provides a detailed analysis of the impact of substrate temperature on (Ga,Mn)N's properties, highlighting the sensitivity of Curie temperature to local growth conditions and methods for assessing magnetic homogeneity.
Findings
No phase separation or nanocrystals detected at various growth temperatures.
Magnetic properties, including Curie temperature, strongly depend on local substrate temperature.
Precise control of substrate temperature is crucial for uniform magnetic properties in (Ga,Mn)N.
Abstract
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 {\deg}C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powder-like and high resolution X-ray diffraction, which do not reveal any crystallographic phase separation, clusters or nanocrystals, even at the lowest Tg. Our synchrotron based X-ray absorption near-edge spectroscopy supported by density functional theory modelling and superconducting quantum interference device magnetometry results point to the predominantly +3 configuration of Mn in GaN and thus the ferromagnetic phase has been observed in layers with x > 5% at 3 < T < 10 K. The main…
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