Grain-Boundary Kinetics: A Unified Approach
Jian Han, Spencer L. Thomas, David J. Srolovitz

TL;DR
This paper introduces a unified disconnection-based framework for understanding and modeling grain boundary kinetics, linking microscopic defect behavior to macroscopic material properties in polycrystals.
Contribution
It presents a comprehensive, unifying approach to grain boundary kinetics using disconnection theory, integrating bicrystallography with defect dynamics.
Findings
Disconnections characterize GB behavior through bicrystallography.
GB kinetics can be modeled via disconnection nucleation, propagation, and reactions.
The framework links microscopic defect processes to microstructural evolution.
Abstract
Grain boundaries (GBs) are central defects for describing polycrystalline materials, and playing major role in a wide-range of physical properties of polycrystals. Control over GB kinetics provides effective means to tailor polycrystal properties through material processing. While many approaches describe different GB kinetic phenomena, this review provides a unifying concept for a wide range of GB kinetic behavior. Our approach rests on a disconnection description of GB kinetics. Disconnections are topological line defects constrained to crystalline interfaces with both step and dislocation character. These characteristics can be completely specified by GB bicrystallography and the macroscopic degrees of freedom of GBs. GB thermal fluctuations, GB migration and the ability of GBs to absorb/emit other defects from/into the delimiting grains can be modeled via the nucleation, propagation…
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