Blurring the boundaries between topological and non-topological phenomena in dots
Denis R. Candido, M. E. Flatt\'e, J. Carlos Egues

TL;DR
This study explores the electronic properties of InAsBi quantum dots, revealing that both topological and trivial dots exhibit similar conductance features, blurring the distinction between topological and non-topological phenomena.
Contribution
It introduces a detailed analysis of InAsBi quantum dots, demonstrating the coexistence of topological and trivial edge states and their impact on conductance, expanding understanding of quantum dot topological properties.
Findings
Both topological and trivial QDs show conductance peaks at 2e^2/h.
Geometrically protected edge-like states exist in trivial QDs.
Conductance features can be similar for topological and non-topological dots.
Abstract
We investigate the electronic and transport properties of topological and trivial InAsBi quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAsBi, we predicted that Bi-alloyed quantum wells become meV gapped 2D topological insulators for well widths nm and obtain the parameters of the corresponding Bernevig-Hughes-Zhang (BHZ) model. We analytically solve this model for cylindrical confinement via modified Bessel functions. For non-topological dots we find "geometrically protected" discrete helical edge-like states, i.e., Kramers pairs with spin-angular-momentum locking, in stark contrast with ordinary InAs QDs. For a conduction window with four edge states, we find that the two-terminal conductance vs. the QD radius and the gate controlling…
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Taxonomy
TopicsTopological Materials and Phenomena
