Diamond anvil cell using boron-doped diamond electrodes covered with undoped diamond insulating layer

TL;DR

This paper presents a novel high-pressure diamond anvil cell with boron-doped diamond electrodes covered by undoped diamond insulators, enabling effective electrical measurements and revealing enhanced superconductivity in FeSe crystals.

Contribution

Developed a new diamond anvil cell with integrated boron-doped electrodes and undoped insulating layers for improved high-pressure electrical measurements.

Findings

Successfully measured electrical transport of FeSe under high pressure.

Enhanced superconducting transition temperature of FeSe up to 43 K.

Demonstrated the device's capability for high-pressure superconductivity studies.

Abstract

Diamond anvil cell using boron-doped metallic diamond electrodes covered with undoped diamond insulating layer have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of high quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of FeSe single crystal was enhanced up to 43 K by applying uniaxial-like pressure.