On the Study of Chaos and Memory Effects in the Bonhoeffer-van der Pol Oscillator with a Non-Ideal Capacitor
Jamieson Brechtl, Xie Xie, Karin A. Dahmen, Peter K. Liaw, Steven J., Zinkle

TL;DR
This study investigates how memory effects in a non-ideal capacitor influence the chaotic and oscillatory behavior of the Bonhoeffer-van der Pol oscillator, revealing that increased memory enhances energy storage and alters dynamical regimes.
Contribution
It introduces a fractional differential equation model for the non-ideal capacitor, linking memory effects to the oscillator's dynamical behavior and energy storage.
Findings
Memory parameter increases energy stored in dielectric.
Oscillation death leads to higher energy storage.
Memory effects influence voltage dynamics and dielectric behavior.
Abstract
In this paper, the voltage fluctuations of the Bonhoeffer van der pol oscillator system with a non-ideal capacitor were investigated. Here, the capacitor was modeled, using a fractional differential equation in which the order of the fractional derivative is also a measure of the memory in the dielectric. The governing fractional differential equation was derived using two methods, namely a differential and integral approach. The former method utilized a hierarchical resistor-capacitor (RC) ladder model while the latter utilized the theory of the universal dielectric-response. The dynamical behavior of the potential across the capacitor was found to be affected by this parameter, and, therefore, the memory of the system. Additionally, findings indicate that an increase in the memory parameter was associated with an increase in the energy stored in the dielectric. It was found that…
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