Electronic structure and optical properties of Sr$_2$IrO$_4$ under epitaxial strain
Churna Bhandari, Zoran S. Popovi\'c, and S. Satpathy

TL;DR
This study investigates how epitaxial strain alters the electronic and optical properties of Sr$_2$IrO$_4$, revealing a strain-induced valence band crossover and explaining optical anisotropy through density functional theory.
Contribution
It provides a detailed analysis of strain effects on Sr$_2$IrO$_4$'s electronic structure, including a prediction of the valence band crossover at about 3% tensile strain and a minimal tight-binding model.
Findings
Strain changes the Ir-O-Ir bond angle affecting the band structure.
Predicted Γ-X crossover of the valence band maximum at ~3% tensile strain.
Optical spectra anisotropy explained by Ir orbital admixture.
Abstract
We study the modification of the electronic structure in the strong spin-orbit coupled SrIrO by epitaxial strain using density functional methods. Structural optimization shows that strain changes the internal structural parameters such as the Ir-O-Ir bond angle, which has an important effect on the band structure. An interesting prediction is the X crossover of the valence band maximum with strain, while the conduction minimum at M remains unchanged. This in turn suggests strong strain dependence of the transport properties for the hole doped system, but not when the system is electron-doped. Taking the measured value of the separation for the unstrained case, we predict the X crossover of the valence band maximum to occur for the tensile epitaxial strain . A minimal tight-binding model within the subspace…
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