Transport Properties of Near Surface InAs Two-dimensional Heterostructures

TL;DR

This paper investigates the transport properties of InAs two-dimensional heterostructures, highlighting high mobility, strong spin-orbit coupling, and the observation of integer quantum Hall states, advancing their potential for hybrid quantum devices.

Contribution

It demonstrates improved electron mobility and the realization of integer quantum Hall states in InAs heterostructures with tunable parameters, contributing to the development of hybrid quantum systems.

Findings

Electron mobility up to 44,000 cm²/Vs achieved.

Observation of well-developed integer quantum Hall states at low magnetic fields.

Presence of strong spin-orbit coupling indicated by weak antilocalization measurements.

Abstract

Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid device architectures and study of exotic states in proximity of superconductors. In this work, we study indium arsenide heterostructures where combination of clean interface with superconductivity, high mobility and spin-orbit coupling can be achieved. The weak antilocalization measurements indicate presence of strong spin-orbit coupling at high densities. We study the magnetotransport as a function of top barrier and density and report clear observation of integer quantum Hall states. We report improved electron mobility reaching up to 44,000 cm$^{2}$/Vs in undoped heterstructures and well developed integer quantum Hall states starting as low as 2.5~T.