Two-Dimensional Dirac Fermions in Thin Films of Cd3As2

TL;DR

This paper investigates two-dimensional Dirac fermions in thin films of Cd3As2, revealing topologically non-trivial states, a zero energy Landau level, and potential for gate-tunable topological devices.

Contribution

It provides experimental evidence of 2D Dirac electronic spectrum and topological states in Cd3As2 thin films through transport and capacitance measurements.

Findings

Observation of p-type conduction as Fermi level crosses charge neutrality point

Detection of zero energy Landau level in magnetic field

Resistance at charge neutrality point is approximately h/e2

Abstract

Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electric fields. The results establish the two-dimensional Dirac electronic spectrum of these states. We observe signatures of p-type conduction in the two-dimensional states as the Fermi level is tuned across their charge neutrality point and the presence of a zero energy Landau level, all of which indicate topologically non-trivial states. The resistance at the charge neutrality point is approximately h/e2 and increases rapidly under the application of a magnetic field. The results open many possibilities for gate-tunable topological devices and for the exploration of novel physics in the zero energy Landau level.