III-V Tri-Gate Quantum Well MOSFET: Quantum Ballistic Simulation Study for 10nm Technology and Beyond

TL;DR

This paper presents a quantum ballistic simulation of III-V tri-gate MOSFETs at 10nm, analyzing how device parameters affect performance, electrostatics, and carrier transport near the ballistic limit.

Contribution

It provides a comprehensive quantum transport analysis of 10nm tri-gate MOSFETs, exploring parameter effects on performance and extracting ballistic carrier properties.

Findings

Increasing channel cross-section boosts drain current but degrades short channel and subthreshold performance.

Thicker gate oxide influences device performance up to a certain thickness but does not affect threshold voltage.

Device dimension and oxide thickness significantly impact ballistic velocity and carrier mobility.

Abstract

In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthrshold and short channel performance is observed and presented. The ballistic simulation result has also been used to observe the electrostatic performance and Capacitance-Voltage characteristics of the device. With constant urge to keep in pace with Moore's law as well as aggressive scaling and device operation reaching near ballistic limit, a full quantum transport study at 10nm gate length is necessary. Our simulation reveals an increase in device drain current with increasing channel cross-section. However short channel performance and subthreshold performance get degraded with channel cross-section increment. Increasing device cross-section lowers threshold voltage of the device. The effect of gate oxide thickness on ballistic device performance is also observed. Increase in top gate oxide thickness affects device performance only upto a certain value. The thickness of the top gate oxide however shows no apparent effect on device threshold voltage. The ballistic simulation study has been further used to extract ballistic injection velocity of the carrier and ballistic carrier mobility in the channel. The effect of device dimension and gate oxide thickness on ballistic velocity and effective carrier mobility is also presented.