Field-effect-driven half-metallic multilayer graphene

TL;DR

This paper demonstrates that field-effect doping in rhombohedral multilayer graphene induces perfect half-metallicity, enabling highly spin-polarized currents suitable for novel electric-field-controlled spintronic devices.

Contribution

It reveals that electric field doping can turn multilayer graphene into a perfect half-metal, advancing spintronics with electric-field-driven switching.

Findings

Field-effect doping induces half-metallicity in multilayer graphene.

Achieves 100% spin polarization at practical doping levels.

Enables electric-field-controlled spintronic device concepts.

Abstract

Rhombohedral stacked multilayer graphene displays the occurrence of a magnetic surface state at low temperatures. Recent angular resolved photoemission experiments demonstrate the robustness of the magnetic state in long sequences of ABC graphene. Here, by using first-principles calculations, we show that field-effect doping of these graphene multilayers induces a perfect half-metallic behaviour with 100% of spin current polarization already at dopings attainable in conventional field effect transistors with solid state dielectrics. Our work demonstrates the realisability of a new kind of spintronic devices where the transition between the low resistance and the high resistance state is driven only by electric fields.