Frequency control of single quantum emitters in integrated photonic circuits

TL;DR

This paper demonstrates electric field tuning of defect emission energies in integrated photonic devices with nitrogen vacancy centers, improving photon indistinguishability for quantum entanglement applications.

Contribution

It introduces a method to partially stabilize defect emission energies in integrated photonic circuits using electric field tuning.

Findings

Large field-dependent tuning ranges achieved.

Partial stabilization of defect emission energies demonstrated.

Addresses challenges in chip-scale entanglement generation.

Abstract

Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.