Silicon Vibrating Wires at Low Temperatures
Eddy Collin, Laure Filleau, Thierry Fournier, Yuriy M. Bunkov, Henri, Godfrin

TL;DR
This paper investigates silicon vibrating wire devices at low temperatures, analyzing their resonance behavior, non-linear responses, and friction mechanisms, with potential applications in quantum fluid studies and MEMS technology.
Contribution
It presents a detailed study of silicon vibrating wires from 10 mK to 30 K, including modeling of resonance and non-linear effects, and characterizes friction mechanisms in metallic layers.
Findings
Resonance characteristics are well explained by simple models.
Non-linearity mainly due to device geometry.
Friction originates in metallic layers and is fully characterized.
Abstract
Nowadays microfabrication techniques originating from micro-electronics enable to create mechanical objects of micron-size. The field of Micro-Electro-Mechanical devices (MEMS) is continuously expanding, with an amazingly broad range of applications at room temperature. Vibrating objects (torsional oscillators, vibrating wires) widely used at low temperatures to study quantum fluids, can be replaced advantageously by Silicon MEMS. In this letter we report on the study of Silicon vibrating wire devices. A goal-post structure covered with a metal layer is driven at resonance by the Laplace force acting on a current in a magnetic field, while the induced voltage arising from the cut magnetic flux allows to detect the motion. The characteristics of the resonance have been studied from 10 mK to 30 K, in vacuum and in He gas. In this article, we focus on the results obtained above 1.5 K,…
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