Field effect enhancement in buffered quantum nanowire networks

TL;DR

This study demonstrates that buffered InAs nanowire networks grown via molecular beam epitaxy exhibit enhanced field effect mobility, strong spin-orbit interaction, and long coherence lengths, making them promising for scalable quantum technologies.

Contribution

The paper introduces a buffered growth method for InAs nanowire networks that improves mobility and quantum coherence, advancing scalable quantum device platforms.

Findings

Enhanced field effect mobility due to elastic strain relaxation

Presence of strong spin-orbit interaction in the networks

Long phase coherence lengths indicating ballistic transport

Abstract

III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.