# A lateral-type spin-photodiode based on Fe/x-AlOx/p-InGaAs junctions with a refracting-facet side window

## TL;DR

This paper introduces a novel lateral spin-photodiode with a refracting facet that efficiently generates spin-polarized carriers at room temperature, achieving the highest reported conversion efficiency for such devices.

## Contribution

It presents the first demonstration of a lateral-type spin-photodiode with a refracting side window and analyzes the factors limiting its efficiency.

## Key findings

- Achieved a conversion efficiency of ~0.4%, the highest for lateral spin-photodiodes.
- Demonstrated room temperature operation of the device.
- Identified unoccupied spin-polarized states in Fe as a limiting factor.

## Abstract

A lateral-type spin-photodiode having a refracting facet on a side edge of the device is proposed and demonstrated at room temperature. The light shed horizontally on the side of the device is refracted and introduced directly into a thin InGaAs active layer under the spin-detecting Fe contact in which spin-polarized carriers are generated and injected into the Fe contact through a crystalline AlOx tunnel barrier. Experiments have been carried out with a circular polarization spectrometry set up, through which helicity-dependent photocurrent component, dI, is obtained with the conversion efficiency F ~ 0.4 %, where F is the ratio between dI and total photocurrent Iph. This value is the highest reported so far for pure lateral-type spin-photodiodes. It is discussed through analysis with a model consisting of drift-diffusion and quantum tunneling equations that a factor that limits the F value is unoccupied spin-polarized density-of-states of Fe in energy region into which spin-polarized electrons in a semiconductor are injected.

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Source: https://tomesphere.com/paper/1802.07393