First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors

TL;DR

FBK has produced 50μm ultra-fast silicon detectors with various gain layers, demonstrating promising timing performance and radiation hardness, aiming to surpass current radiation resistance limits for high-energy physics applications.

Contribution

This paper reports the first production and comprehensive characterization of 50μm UFSD with novel gain layer doping profiles for enhanced radiation hardness.

Findings

Good timing performance demonstrated

Radiation damage tolerance shows potential for high-radiation environments

Different gain layer designs influence radiation resistance

Abstract

Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $\mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $\phi \sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.